UCSB Engineering
Faculty

James Speck

Professor

Materials


Contacts

Materials Department
University of California
Santa Barbara, CA 93106

tel: (805) 893-8005
fax: (805) 893-8983
speck@mrl.ucsb.edu

Personal web site

Research Description

Speck’s research focuses on the relationship between thin film electronic materials growth, microstructure, and the relation between microstructure and physical properties. Much of the experimental work focuses on MOCVD or MBE growth studies coupled with structural characterization by transmission and scanning electron microscopy, x-ray diffraction, and atomic force microscopy. Speck also has active research and collaborations in modeling microstructure and physical properties. His current work is largely centered on the MOCVD and MBE growth and characterization of wide bandgap nitrides, but he also has projects in to defect reduction in highly misfitting thin film semiconductors, the growth and microstructure of thin film oxides grown epitaxially on semiconductor or oxide substrates, and the structure and properties of epitaxial ferroelectric films. Speck is a member of the Materials Research Society, the American Physical Society, and the Microscopy Society of America. He is the author of approximately 150 papers in refereed archival journals and 50 refereed and other conference proceedings.

Selected Publications

  • Strain-engineered self-assembled semiconductor quantum dot lattices, Appl. Phys. Lett., 78, 2001, 105, H. Lee, J.A. Johnson, M.Y. He, J.S. Speck, P.M. Petroff
  • BaSrTiO3 interdigitated capacitors for distributed phase shifter applications, IEEE Micro. Guided Wave Lett., 10, 2000, 448, Y. Liu, A. S. Nagra, E.G. Erker, P. Periaswamy, T.R. Taylor, J. Speck, R.A. York
  • Development of cross-hatch morphology during growth of lattice mismatched layers, Appl. Phys. Lett., 77, 2000, 3740, A.M. Andrews, A.E. Romanov, J.S. Speck, M. Bobeth, W. Pompe
  • Effect of AlGaN/GaN strained layer superlattice period on InGaN MQW laser diodes, MRS Internet Journal of Nitride Semiconductor Research, 5, 2000, U17, M. Hansen, A.C. Abare, P. Kozodoy, T.M. Katona, M.D. Craven, J.S. Speck, U.K. Mishra, L.A. Coldren, S.P. DenBaars
  • Effects of growth conditions on the incorporation of oxygen in AlGaN layers grown by plasma assisted molecular beam epitaxy, Appl. Phys. Lett., 77, 2000, 3167, C.R. Elsass, T. Mates, B. Heying, C. Poblenz, P. Fini, P.M. Petroff, S.P. DenBaars, J.S. Speck
  • Improved characteristics of InGaN multi-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire, MRS Internet Journal of Nitride Semiconductor Research, 5, 2000, U11, M. Hansen, P. Fini, L.J. Zhao, A. Abare, L.A. Coldren, J.S. Speck, S.P. DenBaars
  • Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure, J. Appl. Phys., 88, 2000, 6583, S. Elhamri, A. Saxler, W.C. Mitchel, C.R. Elsass, I.P. Smorchkova, B. Heying, E. Haus, P. Fini, J.P. Ibbetson, S. Keller, P.M. Petroff, S.P. DenBaars, U.K. Mishra, J.S. Speck
  • Step bunching on the vicinal GaN (0001) surface, Phys. Rev. B, 62,, 2000, R10661, M.V.R. Murty, P. Fini, G.B. Stephenson, C. Thompson, J.A. Eastman, A. Munkholm, O. Auciello, R. Jothilingam, S.P. DenBaars, J.S. Speck
  • Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers, Appl. Phys. Lett., 77, 2000, 3998, I.P. Smorchkova, S. Keller, S. Heikman, C.R. Elsass, B. Heying, P. Fini, J.S. Speck, U.K. Mishra
  • Cesium and Bromine Doping into Hexagonal Boron Nitride, J. Mater. Res., 1, 1986, 685, M. Sakamoto, J.S. Speck and M.S. Dresselhaus