MEMS-Tunable Vertical-Cavity SOAs
We have demonstrated the first widely tunable vertical-cavity semiconductor optical amplifiers (VCSOAs). These devices utilize an integrated electrostatic tuning element for wavelength selection, and are fabricated using an AlGaAs micromachining technique.

The tunable VCSOA operates near 1550 nm, with an InP-based, stacked MQW gain medium. In order to combine the high gain long-wavelength InP active material with GaAs/AlGaAs DBRs, we use a wafer scale direct bonding process prior to fabricating the micromechanical actuaor. Further details may be found in the publications below.

contact: Garrett Cole

Recent Press:

Compound semiconductor MEMS community targets new applications,” Richard Stevenson, Compound Semiconductor, March 2006, pp. 23-25.

"Inverted vertical-cavity SOA ramps tunability," Tami Freeman, FibreSystems Europe/LIGHTWAVE Europe, Jan/Feb. 2006, pp. 7.

"R&D Highlights: MEMS enhance SOA tuning range," Tami Freeman, FibreSystems Europe/LIGHTWAVE Europe, Dec. 2004, pp. 5.

"Light Booster," Larry Hardesty, Technology Review, September 2004, pp.19.

"MEMS make SOAs tune farther and faster," Tami Freeman, FibreSystems Europe/LIGHTWAVE Europe, Aug. 2004, pp. 7.


Publications:

Journal Articles

"Widely tunable bottom-emitting vertical-cavity SOAs," G.D. Cole, E.S. Bjorlin, C.S. Wang, N.C. MacDonald, J.E. Bowers, IEEE Photonics Technology Letters, vol. 17, no. 12, December 2005, pp. 2526-2528.

"MEMS-tunable vertical-cavity SOAs," G.D. Cole, E.S. Bjorlin, Q. Chen, C.-Y. Chan, S. Wu, C.S. Wang, N.C. MacDonald, J.E. Bowers, IEEE Journal of Quantum Electronics, vol. 41, no. 3, March 2005, pp. 390-407.

"First demonstration of a MEMS tunable vertical-cavity SOA," Q. Chen, G.D. Cole, E.S. Bjorlin, T. Kimura, S. Wu, C.S. Wang, N.C. MacDonald, J.E. Bowers, IEEE Photonics Technology Letters, vol.16, no.6, June 2004, pp.1438-1440.


Conference Proceedings

"Tunable Vertical-Cavity SOAs: a unique combination of tunable filtering and optical gain," G.D. Cole, SPIE Optics East, IT103 Optoelectronic Devices: Physics, Fabrication, and Application II, Boston, MA, 23 - 26 Oct. 2005. (INVITED)

"Dynamic Characterization of MEMS tunable vertical-cavity SOAs," G.D. Cole, J.E. Bowers, K.L. Turner, N.C. MacDonald, IEEE/LEOS International Conference on Optical MEMS and Their Applications (MOEMS 2005), Oulu, Finland, 1 - 4 Aug. 2005.

"Design and analysis of MEMS tunable vertical-cavity semiconductor optical amplifiers," G.D. Cole, E.S. Björlin, Q. Chen, C.-Y. Chan, S. Wu, C.S. Wang, J.E. Bowers, N.C. MacDonald, in Proceedings of 17th International Conference on InP and Related Materials, Glasgow, Scotland, UK, 8 - 12 May 2005.

"Wavelength selection in MEMS tunable vertical-cavity SOAs," G.D. Cole, Q. Chen, E.S. Björlin, T. Kimura, S. Wu, C.S. Wang, J.E. Bowers, and N.C. Macdonald, 15th Optical Amplifiers and their Applications OSA Topical Meeting and Exhibit, San Francisco, CA, July 2004.

"Microelectromechanical tunable long-wavelength vertical-cavity semiconductor optical amplifiers," G.D. Cole, Q. Chen, E.S. Björlin, T. Kimura, S. Wu, C.S. Wang, J.E. Bowers, N.C. MacDonald, in Proceedings of 16th International Conference on InP and Related Materials, Kagoshima, Japan, Paper FA2-4, 31 May - 4 June 2004, pp. 708-711.

"1550-nm Vertical-Cavity SOAs for Optically Preamplified High Bit Rate Receivers," T. Kimura, E.S. Bjorlin, G.D. Cole, H.F. Chou, J.E. Bowers, in Proceedings of 30th European Conference on Optical Communications, Stockholm, Sweden, 5-9 Sep. 2004, Paper We4.P.070.