System C

System C is a vertical reactor with 8 ports plus a dual gas injector/pyrometry port. As of summer 2008, available materials are: Al, Ga, In, Er, As, Sb, Si, Be, and CBr4. In addition, there is an e-beam evaporation chamber attached under UHV, allowing the deposition of thin films of refractory metals such as Mo. A thermally cracked hydrogen station allows desorption of native oxides from GaSb and similar wafers without melting them, as well as surface cleaning of InP and InGaAs prior to regrowth.

Recent activity on System C includes:

• ErAs nanoparticles and films on GaAs and InGaAs for physics, tunnel junctions, and thermoelectrics. (Bowers and Gossard groups)
• Quantum dot and quantum pillar VCSELs and cavity QED. (Petroff group)
• High-mobility channels for InGaAs III-V MOSFETs. (Rodwell group)
• Record low resistance ohmic contacts to InGaAs and InAs for next-generation MOSFETs and HBTs. (Rodwell group)